2SC2053
Silicon NPN Transistor
RF Amplifier

The 2SC2053 is a silicon NPN epitaxial planer type transistor designed for RF amplifiers on VHF band mobile radio applications.

WINTransceiver
B C E

Features:

Application:

Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 17V
Collector-Base Voltage, VCBO 40V
Emitter-Base Voltage, VEBO 4V
Collector Current, IC 0,3A
Collector Power Dissipation (TA = +25C), PD 0,6W
Operating Junction Temperature, TJ +135C
Storage Temperature Range, Tstg -55 to +150C
Thermal Resistance, Junction-to-Ambient, RthJA 183C/W

Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 40 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity 17 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 4 - - V
Collector Cutoff Current ICBO VCB = 15V IE = 0 - - 20 A
Emitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 20 A
DC Forward Current Gain hFE VCE = 10V, IC = 100mA, Note 1 10 50 180  
Power Output PO VCC = 13.5V, Pin = 4mW, f = 175MHz 0,15 0,2 - W
Collector Efficiency   40 50 - %
Note 1. Pulse test: Pulse Width = 150s, Duty Cycle = 5%.